Making a semiconductor laser structure by liquid phase epitaxy

Details Making a semiconductor laser structure by liquid phase epitaxy Making a semiconductor laser structure by liquid phase epitaxy

1977-04-04

1978-03-07

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 335, 148172, 252 623GA, 357 18, 357 56, 331 945H, H01L 21208

Patent

active

040778177

ABSTRACT:
A semiconductor laser structure has side facets perpendicular to its substrate and a flat top. The central cavity is an elongated rectangular cavity. A substrate having (100) orientation has a mask patterned thereon with a window having an elongated central member and at least two cross members perpendicular to the axis of the elongated central member. The semiconductor material is grown thereon by liquid phase epitaxy.

REFERENCES:
patent: 3883219 (1975-05-01), Logan et al.
patent: 3884733 (1975-05-01), Bean
patent: 3893044 (1975-07-01), Dumke et al.
patent: 3902133 (1975-08-01), Watts
patent: 3956727 (1976-05-01), Wolf

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