Making a semiconductor device with ammonia treatment of photores

Details Making a semiconductor device with ammonia treatment of photores Making a semiconductor device with ammonia treatment of photores

1990-06-27

1991-01-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437241, 430312, 148DIG137, H01L 2147

Patent

active

049853740

ABSTRACT:
A manufacturing method of a semiconductor device of the present invention comprises a first step of exposing a periphery of a first region of a photoresist layer coating an insulating layer formed on a semiconductor substrate and a periphery of a second region for positioning, and a second step of heating said photoresist layer in ammonia atmosphere and forming an alkali insoluble portion in the periphery of the first region and that of the second region, a third step of exposing a third region, which is smaller than the first region, and the second region and developing these regions, a fourth step of etching the third region and the second region to a predetermined depth, and a fifth step of repeating the third and fourth steps once or more in a region, which is smaller than the third region, and the second region.

REFERENCES:
patent: 4315984 (1982-02-01), Okazaki et al.
patent: 4523976 (1985-06-01), Bukhman
patent: 4568631 (1986-02-01), Badami et al.
patent: 4775609 (1988-10-01), McFarland
patent: 4842991 (1989-06-01), Brighton
patent: 4885231 (1989-12-01), Chan

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