Making a low resistance three layered contact for silicon device

Details Making a low resistance three layered contact for silicon device Making a low resistance three layered contact for silicon device

1988-12-16

1990-01-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437199, 437200, 148DIG19, H01L 2100, H01L 2102, H01L 2190, H01L 21306

Patent

active

048928445

ABSTRACT:
A three-layer metal contact including aluminum is provided for silicon-based semiconductor devices to minimize the effects of formation of silicon precipitates in the aluminum layer and low contact junction leakage. The metal contact comprises a first layer of a refractory metal silicide formed on a silicon surface, an intermediate layer of aluminum formed on the refractory metal silicide and a top layer of a refractory metal silicide formed on the layer of aluminum. Where contact is made to polysilicon layers forming high resistance load resistors, the metal contact of the invention prevents reduction in resistance resulting from the interdiffusion of silicon and aluminum.

REFERENCES:
patent: 4507852 (1985-04-01), Karulkar
patent: 4744861 (1988-05-01), Matsunaga et al.
patent: 4796081 (1989-01-01), Cheung et al.
patent: 4800177 (1989-01-01), Nakamae
patent: 4824803 (1989-04-01), Us et al.
Wolf et al., Silicon Processing for the VLSI ERA, vol. 1, Lattice Press, Sunset Beach, 1986, pp. 384-399.
Gardner, D., Layered and Homogeneous Films of Aluminum and Aluminum/Silicon with Titanium and Tungsten for Multilevel Interconnects, IEEE Tran. on Elect. Dev., vol. ED-32, No. 2, Feb. 1985.

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