Majority logic gate

Details Majority logic gate Majority logic gate

1981-02-23

1983-12-27

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307475, 307561, H03K 1923, H03K 19092, H03K 19094, H03K 508

Patent

active

044233396

ABSTRACT:
A majority logic gate is comprised of a plurality of depletion mode switching devices and includes Schottky diodes for both level shifting and clamping the high logic level output voltage to ground. A plurality of MESFET input devices each have their gate electrode coupled to one input of the majority logic gate. Each MESFET input device has a source coupled to ground and a drain coupled to a current load device. The voltage level at the drain at each of the input devices changes from a logical "0" to a logical "1" state depending upon the number of inputs which are at a logical "1" level. The drain voltage is then level shifted down. The high logic level output voltage is clamped to ground by means of two Schottky diodes the first of which has a cathode coupled to ground and an anode coupled to the anode of the second diode, the cathode of the second diode being coupled to the output of the circuit.

REFERENCES:
patent: 3567957 (1971-03-01), Aten
patent: 3609329 (1971-09-01), Martin
Nuzillat et al., "A Subnanosecond Integrated Switching Circuit with MESFET's for LSI", IEEE-JSSC, vol. SC-11, No. 3, pp. 385-394, 6/76.
Van Tuyl et al., "High-Speed Integrated Logic with GaAs MESFET's", IEEE-JSSC, vol. SC-9, No. 5, pp. 269-276, 10/74.

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