Majority carriers-variable threshold rectifier and/or voltage re

Details Majority carriers-variable threshold rectifier and/or voltage re Majority carriers-variable threshold rectifier and/or voltage re

1974-02-11

1976-02-24

James, Andrew J.

Metal treatment

Stock

Ferrous

357 33, 357 48, 357 58, 357 90, 148175, H01L 2990

Patent

active

039407837

ABSTRACT:
A majority charge carrier semiconductor structure including a relatively heavily doped n type support layer, a second n type layer formed on the support layer and having a relatively light doping, a p layer formed on the second n layer, and a third n type layer having a relatively heavy doping formed atop the p layer. When voltage means is applied between top and support layers principal current flow is by majority charge carriers in either direction determined by the polarity of a pre-determined voltage. Current flow occurs substantially below the critical electric field, and free of avalanche multiplication or tunneling. In alternate embodiments the doping impurity concentration may be varied to alternately provide a device wherein the magnitude of voltage reference which determines current flow in one direction or in the opposite direction may be symmetrical, asymmetrical or highly asymmetrical.

REFERENCES:
patent: 3383571 (1968-05-01), Turner et al.
patent: 3427515 (1969-02-01), Blicher et al.
patent: 3469117 (1969-09-01), Mizushima et al.
patent: 3544855 (1970-12-01), Nannichi
patent: 3665266 (1972-05-01), Drozdowicz et al.
patent: 3709746 (1973-01-01), De Witt
patent: 3821657 (1974-06-01), Yu et al.
patent: 3855605 (1974-12-01), Kawamoto
patent: 3882529 (1975-05-01), Warner
R. Denning et al., "Epitaxial II-V, N-P-N High-Voltage Power Transistors," IEEE Trans. on Elec. Dev., Vol. Ed. 17, No. 9, Sept. 1970, pp. 711-716.
S. Liu et al., "Low Noise Punch-Through PN-V-P, P-N-P, and P-N-Metal Microwave Diodes," RCA Review, Vol. 32, Dec. 1971, pp. 636-644.

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