Magnetron sputtering system

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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Details

20429806, 20429811, 20429814, 20429819, C23C 1435

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active

058689141

ABSTRACT:
A magnetron sputtering system comprising a sputtering chamber. Present within the chamber are a flat cathode plate, an anode, which is cylindrical in one embodiment, and an annular auxiliary electrode. The electrodes are provided co-axially. In this embodiment the anode extends axially from a central area of the sputtering surface of the cathode plate. The auxiliary electrode extends axially from a circumferential area of the sputtering surface of the cathode plate. The anode is electrically insulated from the cathode plate. During operation the auxiliary electrode has a negative potential in relation to the anode potential. Furthermore the chamber comprises a receiving device for receiving a flat substrate to be coated with cathode plate material at a position opposite and parallel to the cathode plate. A magnetic device is provided outside the chamber for generating an electron trap around the anode, which magnetic device is surrounded by the auxiliary electrode. The magnetic device generates an asymmetric magnetic field. The auxiliary electrode enhances the interception of electrons in the electron trap.

REFERENCES:
patent: 4427524 (1984-01-01), Crombeen et al.
patent: 4461688 (1984-07-01), Morrison, Jr.
patent: 4892633 (1990-01-01), Welty
patent: 4943363 (1990-07-01), Zejda et al.
patent: 5174880 (1992-12-01), Bourez et al.
Patent Abstracts of Japan, vol. 11, No. 38, Apr. 4, 1987, JP1204371, Oct. 9, 1986.
Patent Abstracts of Japan, vol. 11, No. 38, Apr. 2, 1987, JP61204371, Oct. 9, 1986.
J. Visser, J.E. Crombeen, D.C. Planar Magnetron Sputtering Source for Video Disc Metallization, Oct. 22, 1984, Vakuum-Technik 34 Jahrgange Heft 3, pp. 67-77, Search Report, Jan. 17, 1996.

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