Magnetron sputtering source

Details Magnetron sputtering source Magnetron sputtering source

1998-02-19

2000-07-25

Diamond, Alan

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429819, 2042982, 20429816, 20429808, 20429807, 20429809, 20429814, 20429818, 20429821, 20429822, C23C 1434

Patent

active

060932937

ABSTRACT:
A sputter source has at least two electrically mutually isolated stationary bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each other. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

REFERENCES:
patent: 4478702 (1984-10-01), Gillery et al.
patent: 4849087 (1989-07-01), Meyer
patent: 5399253 (1995-03-01), Grunenfelder
patent: 5753089 (1998-05-01), Hang
Abstract for JP 9-131169, Patent Abstracts of Japan, Jan. 1997.
Abstract for JP 2-243762, Patent Abstracts of Japan, Sep. 1990.
Abstract for JP 63-250459, Patent Abstracts of Japan, Oct. 1988.

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