Magnetron sputtering of magnetic materials

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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204298, C23C 1500

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active

043246311

ABSTRACT:
The advantages of magnetron sputtering are applied to magnetic target materials by substantially reducing the saturation magnetization of the target material temporarily, and magnetron sputtering the magnetic material while in such a state of reduced magnetization. A technique is disclosed for using the thermal energy inherent in the sputtering process for initially heating the target material to its Curie temperature, thereby rendering the material non-magnetic, and for maintaining the target temperature at or above such temperature during the sputtering process.

REFERENCES:
patent: 3718572 (1973-02-01), Robinson et al.
patent: 3956093 (1976-05-01), McLeod
patent: 4060470 (1977-11-01), Clarke
patent: 4094761 (1978-06-01), Wilson
B. I. Bertelsen, Sputtering Cathode For Magnetic Film Deposition, IBM Technical Disclosure Bulletin, vol. 6, No. 2 Jul., 1963, pp. 69-70.
J. L. Vossen and W. Kerr, editors, Thin Film Processes, Academic Press, New York, 1978 pp. 31, 32.
R. D. Bland, Substrate Heater for Bias Sputtering and Ion Plating Applications, J. Vac. Sci. Technol., vol. 11, No. 5 pp. 906-907.

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