Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1987-07-09
1988-08-02
Niebling, John F.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
2041921, 20419232, 156345, C23C 1434
Patent
active
047612193
ABSTRACT:
A magnetron sputtering etching apparatus includes a pair of electrodes opposed to each other in a vacuum vessel and a radio-frequency power source applying radio-frequency power to the opposed electrodes. Magnetic lines of force, whose components are in parallel with electric lines of force of the radio-frequency power, are set to reach the surface of a substrate to be processed between the electrodes. Magnets are arranged on rear sides of the pair of electrodes, respectively, so that different poles of the magnets are in opposition to each other. At least one of the magnets is rotated about an axis substantially in parallel with the electric lines of force. With this arrangement, charged particles in plasma are spirally rotated with the aid of the magnetic lines of force and the plasma concentrates at locations where magnetic fluxes concentrate thereby accelerating the etching of the substrate. As the magnet is rotated relative to the substrate, the magnetic fluxes move all over the substrate, so that the plasma uniformly attacks the substrate for uniformly etching the surface of the substrate.
REFERENCES:
patent: 4492610 (1985-01-01), Okano et al.
patent: 4498969 (1985-02-01), Ramachandran
patent: 4552639 (1985-11-01), Garrett
patent: 4557819 (1985-12-01), Megcham et al.
patent: 4631106 (1986-12-01), Nakazato et al.
patent: 4657619 (1987-04-01), O'Donnell
M. Sekine, "Silicon Trench Etching Using 10.sup.-3 Torr Magnetron Discharge Reactive Ion Etching", Proceedings of Symposium on Dry Process, Nov. 17-18, 1986, Tokyo, pp. 42-47.
T. Arikado, "Al Tapered Etching Technology Using 10.sup.-3 Torr Magnetron Discharge Reactive Ion Etching", Proceedings of Symposium on Dry Process, Nov. 17-18, 1986, Tokyo, pp. 48-52.
Sasaki Naoto
Sato Fumihiko
Anelva Corporation
Nguyen Nam X.
Niebling John F.
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