Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1984-06-28
1985-05-14
Demers, Arthur P.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
204192R, C23C 1500
Patent
active
045170703
ABSTRACT:
A planar magnetron sputtering cathode assembly especially for simultaneously heating and coating substrates is also adaptable to a cool substrate operation. The cathode assembly features an efficient magnetic circuit using magnet assemblies enclosed within the sputtering chamber using minimal air gaps for magnetic efficiency and high-strength magnets to produce a high field at the sputtering target, and stainless steel cladding of the magnets to protect the magnets as well as to prevent out-gasing from the magnet material. A heat sink fills the space between the magnets to provide excellent cooling of the magnets as well as cooling of the target which seats directly on the heat sink. The target is held in place by bolts to facilitate rapid target changing.
REFERENCES:
patent: 3528902 (1970-09-01), Wasa et al.
patent: 3878085 (1975-04-01), Corbani
patent: 4046660 (1977-09-01), Fraser
patent: 4198283 (1980-04-01), Class et al.
patent: 4204936 (1980-05-01), Hartsough
patent: 4282083 (1981-08-01), Kertesz
patent: 4370217 (1983-01-01), Funaki
Hieronymi et al. Thin Solid Films 96(1982), pp. 241-247.
Chapin Vacuum Technol. Jan. 1974 pp. 38-40.
Van Vorous; Solid State Technol, Dec. 1976 pp. 62-66.
Nyaiesh; Thin Solid Films 86(1981) pp. 267-277.
Demers Arthur P.
General Motors Corporation
Hill Warren D.
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