Magnetron sputtering apparatus

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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20429819, C23C 1434

Patent

active

057700257

ABSTRACT:
A magnetron sputtering apparatus with an improved magnetic field distribution on the surface of a target, so that a film is formed satisfactorily in each and every recess in a substrate arranged in the apparatus, wherein the magnet is so arranged as to produce a magnetic field distribution on the surface of the target having a horizontal magnetic field intensity equal to 0 only at points located within the outer periphery of the target and to ignite electric discharge at a pressure level as low as 10.sup.-2 Pa. The magnet is also so configured as to produce a magnetic field distribution having a horizontal magnetic field intensity of not lower than 140 Gauss at a position on the surface of the target where the vertical magnetic field intensity is equal to 0 and a vertical magnetic field intensity of not lower than 60 Gauss at a position on the surface of the target where the horizontal magnetic field intensity is equal to 0.

REFERENCES:
patent: 4872964 (1989-10-01), Suzuki et al.
patent: 4995958 (1991-02-01), Anderson et al.
patent: 5417833 (1995-05-01), Harra et al.

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