Magnetron sputtering apparatus

Details Magnetron sputtering apparatus Magnetron sputtering apparatus

1994-01-07

1995-02-28

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429812, 20419212, C23C 1434

Patent

active

053933982

ABSTRACT:
A magnetron sputtering apparatus comprises: a wafer holder for holding a wafer thereon; a target holder for holding a target thereon, disposed opposite to the wafer holder; and a particle interceptor for intercepting some of particles ejected from the target, disposed between the wafer holder and the target holder. The diameter of the target is not less than that of the wafer and not greater than a value 1.4 times that of the wafer. Most particles fall on the surface of the wafer at small incidence angles and only few particles impinge and accumulate on the particle interceptor, so that particles deposit in a film of a uniform thickness over the surface of the wafer and are able to fall on the bottom surfaces of contact holes formed in the wafer. In a modification, the particle interceptor is moved in a plane parallel to the surface of the wafer to distribute particles uniformly over the surface of the wafer.

REFERENCES:
patent: 4960072 (1990-10-01), Ohta et al.
patent: 4988424 (1991-01-01), Woodward et al.
English Language Abstracts for each Japanese document.

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