Magnetron sputtering apparatus

Details Magnetron sputtering apparatus Magnetron sputtering apparatus

1983-11-17

1985-03-19

Demers, Arthur P.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, C23C 1500

Patent

active

045057982

ABSTRACT:
Magnetron sputtering apparatus is described in which the target cathode is constructed of one material, for example chromium, with one or more other materials deposited thereon.
A disc of chromium with nickel sectors is described as one target cathode to give a nickel to chromium ratio of 10 to 90 while rectangular and cylindrical targets are also described.

REFERENCES:
patent: 3502562 (1970-03-01), Humphries
patent: 3829373 (1974-08-01), Kuehnle
patent: 4252626 (1981-02-01), Wright et al.
patent: 4297189 (1981-10-01), Smith et al.
patent: 4404263 (1983-09-01), Hodes et al.
Hanak, Proc. 6th Internl. Vacuum Cong., 1974, Japan, J. Appl. Phys., Suppl. 2, Part 1, 1974; pp. 809-812.
Sinclair et al., Rev. Scient. Instruments, vol. 33, #7, 1962, pp. 744-746.
Vossen, Thin Film Processes; Academic Press; N.Y.; N.Y., 1978, pp. 134-139.

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