Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Statutory Invention Registration
1996-04-08
2001-01-02
Tudor, Harold J. (Department: 3641)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C204S298190, C204S298230
Statutory Invention Registration
active
H0001933
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates generally to systems and methods for high vacuum sputtering, and more particularly to a system and method combining magnetron sputtering with pulsed laser plasma sputtering which provides precise control of film composition, microstructure and uniformity.
In magnetron sputtering, the film is grown by bombardment of a target of film material with ions of inert gas. The bombarding atoms are ionized and accelerated toward the target by intersecting magnetic and electric fields. A chemically reactive gas may be added to grow films of nitrides, carbides or oxides in conjunction with appropriate transition metal targets. This technique provides rapid deposition rates of both metal and ceramic materials with large-area coating uniformity, but the required presence of sputtering or reactive gas limits attainable film composition, microstructure, uniformity, adhesion and purity. Because direct control of the energy of sputtered atoms is not practical, electrical bias applied to the growing film is required for control of film microstructure.
In the pulsed laser deposition technique, a pulsed laser beam is focused onto a target of the film material. Laser-target interactions result in material ablation and an energetic gas plume which condenses on the substrate as a film. This method may be applied in ultra-high vacuum and does not require the presence of a gas to generate the plasma. Direct control of the kinetic energy of ablated species is obtained by varying laser power and focus parameters allowing control of film microstructure, but the method is limited by low deposition rates.
The invention solves or substantially reduces in critical importance problems with prior art sputtering systems and methods as just described by providing system and method for high vacuum sputtering of films combining in a single system both magnetron sputtering and pulsed laser plasma sputtering, which, in combination with suitable substrate position control, allows attainment of high deposition rates with precise control of film morphology, stoichiometry, microstructure, composition gradient, and uniformity not achievable with prior art systems. In the practice of the invention, the magnetron sputtering provides high deposition rates, while plasma laser deposition allows control of film structure, microcrystallinity and stoichiometry. Deposition of a variety of metal, ceramic and diamond-like carbon materials having optimum composition, microstructure, thickness and stress state for any selected application may be accomplished.
The invention is especially useful for the deposition of composite and layered coatings with low friction, low wear rates, and high load support capability and substantially improved wear life for such applications as precision turbine engine components.
It is therefore a principle object of the invention to provide improved system and method for high vacuum sputtering of film materials.
It is another object of the invention to provide an improved high vacuum sputtering system and method combining magnetron sputtering and pulsed laser plasma sputtering.
It is yet another object of the invention to provide improved system and method for vacuum sputtering of films with precise control of film composition, microstructure and uniformity.
It is yet another object of the invention to provide improved system and method for vacuum sputtering of high performance wear resistant coatings.
These and other objects of the invention will become apparent as a detailed description of representative embodiments proceeds.
SUMMARY OF THE INVENTION
In accordance with the foregoing principles and objects of the invention, system and method for high vacuum sputtering combining magnetron sputtering and pulsed laser plasma deposition are described wherein simultaneous or sequential magnetron sputtering and pulsed laser deposition operations in a single ultra-high vacuum system provides high deposition rates with precise control of film morphology, stoichiometry, microstructure, composition gradient, and uniformity, in the deposition of high performance coatings of various metal, ceramic and diamond-like carbon materials.
REFERENCES:
patent: 4992153 (1991-02-01), Bergmann et al.
patent: 5242706 (1993-09-01), Cotell et al.
patent: 5395735 (1995-03-01), Nagata et al.
patent: 5468930 (1995-11-01), Nishikawa et al.
Donley Michael S.
Voevodin Andrey A.
Zabinski Jeffrey S.
Kundert Thomas L.
Scearce Bobby D.
The United States of America as represented by the Secretary of
Tudor Harold J.
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