Magnetron plasma processing system

Details Magnetron plasma processing system Magnetron plasma processing system

1995-02-28

1996-09-10

Nguyen, Nam

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118719, 118723MR, 118723MA, 118723E, 20429816, 2042982, 20429825, 20429837, H01L 2100, C23C 1434, C23C 1600

Patent

active

055542492

ABSTRACT:
A magnetron plasma etching system has a plurality of processing chambers connected to a common transfer chamber. Each processing chamber has a pair of counter electrodes for generating an electric field and a magnet mechanism for generating a magnetic field having an N-S axis crossing the electric field. All magnetic fields are rotated in the same plane. The rotation of the magnetic fields is controlled by a controller. When one of the magnetic fields is rotated, the other magnetic fields are rotated at equal speed such that the directions of N-S axes thereof are parallel and identical to that of the one of the magnetic fields.

REFERENCES:
patent: 4825808 (1989-05-01), Takahashi et al.
patent: 5203945 (1993-04-01), Hasegawa et al.
patent: 5270266 (1993-12-01), Hirano et al.
patent: 5376211 (1994-12-01), Harada et al.
patent: 5387893 (1995-02-01), Oguriyama et al.

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