Magnetron cathode sputtering system

Details Magnetron cathode sputtering system Magnetron cathode sputtering system

1983-05-06

1984-01-24

Demers, Arthur P.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, C23C 1500

Patent

active

044275242

ABSTRACT:
Such a system comprises in an envelope 1 a flat cathode 2 from the material to be sputtered and a substantially circular anode situated coaxially with respect to said cathode. Behind the cathode, magnetic means 13 are provided to generate at least one closed tunnel of field lines 14 over a part of the cathode surface (a so-called electron trap). Between the anode 3 and the edge 8 of the cathode is present according to the invention a coaxial, substantially cylindrical auxiliary electrode 15. From the center of the cathode a rod-shaped auxiliary electrode 16 moreover extends axially. Said auxiliary electrodes 15 and 16 modify the electric field in such a manner that the electrons which are not captured in the tunnel of magnetic field lines are directed substantially towards the anode 3. The distance from the rod-shaped electrode 16 to the substrate 7 must be chosen to be comparatively small. By using the invention the substrate is less heated and not so much damaged by electron bombardment.

REFERENCES:
patent: 4362611 (1982-12-01), Logan et al.

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