Magnetron cathode

Details Magnetron cathode Magnetron cathode

1995-09-27

1997-07-01

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20429819, C23C 1434

Patent

active

056434278

ABSTRACT:
A method for forming Ti--TiN laminates adapted to reduce the formation of dust particles harmful to semiconductor devices without detriment to productivity, and a magnetron cathode for performing the method are provided. Ti films and TiN films are formed through sputtering of a Ti target using a multi-chamber system comprising at least two chambers each having a magnetron cathode in which a magnet can be moved to accommodate different films. The type of film being formed in each chamber is periodically alternated to prevent a buildup of TiN film adhered to the inner walls of the chambers which peels and causes dust particles.

REFERENCES:
patent: 5047130 (1991-09-01), Akao et al.
patent: 5120417 (1992-06-01), Takahashi etal.
patent: 5282947 (1994-02-01), Brugge et al.

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