Magnetostatic wave device

Details Magnetostatic wave device Magnetostatic wave device

1997-01-22

1999-02-16

Speer, Timothy M.

Stock material or miscellaneous articles

Composite

Of inorganic material

428701, 428702, 428900, 331107A, B32B 1800

Patent

active

058718567

ABSTRACT:
Disclosed herein is a magnetostatic wave device that employs a single-crystal thin film of the formula Y.sub.3-x M.sub.x Fe.sub.5-y N.sub.Y O.sub.12 (where M denotes at least one member selected from La, Bi, Lu, and Gd, N denotes at least one member selected from Al, In, and Sc, and x and y are defined as 0<x.ltoreq.1.0 and 0<y.ltoreq.1.5, respectively) which is formed by liquid phase epitaxy on a single-crystal substrate of Gd.sub.3 Ga.sub.5 O.sub.12, characterized in that said single-crystal thin film has a lattice constant larger than that of said single-crystal substrate, with the difference (.increment.a) between the two lattice constants being in the range defined by 0.0004 nm.ltoreq..increment.a.ltoreq.0.001 nm. It has good characteristic properties (e.g., low insertion loss and ripple).

REFERENCES:
patent: 4728178 (1988-03-01), Gualtieri
patent: 5198297 (1993-03-01), Tanno
patent: 5449942 (1995-09-01), Tanno
patent: 5601935 (1997-02-01), Fujino

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