Magnetoresistor

Details Magnetoresistor Magnetoresistor

1990-02-23

1991-08-06

Lateef, Marvin M.

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

338 32H, 324252, H01L 4300

Patent

active

050381318

ABSTRACT:
A magnetoresistor includes a thin film of a degenerately doped semiconductor material extending between conductive contacts at opposite edges of the film. The film has a plurality of openings therethrough which are arranged in spaced parallel rows with the openings in each row being between two openings in the adjacent rows. This forms the film into two set of paths which extend around the openings. The openings are selected to be of a size such that when a magnetic field is applied perpendicular to the film, the resistance of the magnetoresistor increases because electron flow through the film between the contacts must be in a substantially circular path around the openings.

REFERENCES:
patent: 3789311 (1974-01-01), Masuda
patent: 3898359 (1975-08-01), Nadkerni
patent: 4224594 (1980-09-01), Anthony et al.
patent: 4926154 (1990-05-01), Heremans et al.
patent: 4939456 (1990-07-01), Morelli et al.
patent: 4978938 (1990-12-01), Partin et al.
S. Kataoka, "Recent Developments of Magnetoresistive Devices and Applications", Circulars of the Electrotechnical Laboratory, No. 182, Agency of Industrial Science and Technology, Tokyo, (Dec. 1974).
H. H. Wieder, "Transport Coefficients of Indium Arsenide Epilayers", Applied Physics Letters, vol. 25, No. 4, pp. 206-208, (Aug. 15, 1974).
G. Burns, Solid State Physics, Sections 18-5 and 18-6, pp. 726-747, Academic Press, Inc., Harcourt Brace Jovanovich, Publishers, New York, 1985.
H. P. Baltes and R. S. Popovic, "Ingrated Semiconductor Magnetic Field Sensors", Proceedings of the IEEE, vol. 74, No. 8, pp. 1107-1132, (Aug. 1986).
S. Kalem, J.-I. Chyi and H. Morkoc, "Growth and Transport Properties of InAs Epilayers on GaAs", Applied Physics Letters, vol. 53, No. 17, pp. 1647-1649, (Oct. 24, 1988).
V. S. Tsoi, "Focusing of Electrons in a Metal by a Transverse Magnetic Field", ZhETF Pis. Red., vol. 19, No. 2, pp. 114-116, (Jan. 20, 1974).
V. S. Tsoi, "Investigation of the Interaction Between Electrons and a Boundary by Means of Transverse Focusing", Sov. Phys.-JETP, vol. 41, No. 5, pp. 927-931, (1975); from Zh. Eksp. Teor. Fiz., vol. 68, pp. 1849-1858, (May 1975).
J. Volger, "Note on the Hall Potential Across an Inhomogeneous Conductor", Physical Reviews, vol. 79, pp. 1023-1024, (1950).
J. M. Ziman, Chapter XI, Electrons and Phonons, The Theory of Transport Phenomena in Solids, pp. 450-482, Oxford University Press, Oxford, England, Copyright 1960 and 1979.

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