Magnetoresistive thin film head

Details Magnetoresistive thin film head Magnetoresistive thin film head

1994-01-26

1999-10-12

Ometz, David L.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

059662735

ABSTRACT:
In a magnetoresistive thin film head including a magnetoresistive element, lead layers for supplying a sense current to the magnetoresistive element and an insulating layer provided in the vicinity of the magnetoresistive element, the insulating layer is formed of a material which has an electrical resistivity greater than 1.times.10.sup.4 .OMEGA.cm and a thermal conductivity greater than 100 W/(mK). The insulating layer may be formed of silicon, diamond-like carbon or the like so as to have an electrical resistivity and a thermal conductivity within the ranges defined above.

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patent: 5250327 (1993-10-01), Ogata et al.
patent: 5258206 (1993-11-01), Hayashi et al.
patent: 5266409 (1993-11-01), Schmidt et al.

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