Magnetoresistive sensor with tunnel barrier and method

Details Magnetoresistive sensor with tunnel barrier and method Magnetoresistive sensor with tunnel barrier and method

2011-01-04

2011-01-04

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C438S003000

Reexamination Certificate

active

07863700

ABSTRACT:
Magnetoresistive sensors with tunnel barrier and method. One embodiment provides a magnetoresistive sensor having a magnetic tunnel junction is provided. The magnetic tunnel junction includes a barrier layer. The barrier layer includes carbon, pyrolytic carbon, or graphene, or graphite.

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