Magnetoresistive sensor with mixed phase antiferromagnetic film

Details Magnetoresistive sensor with mixed phase antiferromagnetic film Magnetoresistive sensor with mixed phase antiferromagnetic film

1987-04-28

1988-11-01

Wolff, John H.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 512, G11B 530

Patent

active

047824131

ABSTRACT:
An improved thin film magnetoresistive (MR) sensor uses an iron-manganese (FeMn) alloy, with the alpha (body-centered-cubic) phase of FeMn present in the alloy, as an antiferromagnetic layer. The presence of alpha FeMn improves the longitudinal exchange bias in the ferromagnetic MR layer, especially when the amount of alpha FeMn exceeds the amount of gamma (face-centered-cubic) FeMn in the FeMn layer.

REFERENCES:
patent: 4103315 (1978-07-01), Hempstead et al.
patent: 4663685 (1987-05-01), Tsang
"Magnetics of Small Magnetoresistive Sensors", by Tsang, J. Appl. Phys. 55(6), Mar. 15, 1984, pp. 2226-2231.
"Exchange Induced Unidirectional Anisotrope at FeMn-Ni.sub.80 Fe .sub.20 Interfaces", by Tsang et al., J. Appl. Phys. 52(3), Mar. 1981, pp. 2471-2473.
Unidirectional Anisotropy in Nickel-Iron Films . . . ", by Hempstead et al., IEEE Transactions on Magnetics, vol. Mag-14, No. 5, Sep. 1978.

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