Magnetoresistive sensor with improved antiferromagnetic film

Details Magnetoresistive sensor with improved antiferromagnetic film Magnetoresistive sensor with improved antiferromagnetic film

1987-04-28

1988-07-05

Wolff, John H.

Dynamic magnetic information storage or retrieval

Head

Hall effect

360110, G11B 512, G11B 530

Patent

active

047558970

ABSTRACT:
An improved thin film magnetoresistive (MR) sensor uses an alloy comprising Fe, Mn and Cr as an antiferromagnetic layer to provide a longitudinal exchange bias in the ferromagnetic MR layer. Sufficient exchange biasing is provided and the FeMnCr layer exhibits excellent corrosion resistance.

REFERENCES:
patent: 3959032 (1976-05-01), Koester et al.
patent: 4089711 (1978-05-01), Saito et al.
patent: 4103315 (1978-07-01), Hempstead et al.
patent: 4663685 (1987-05-01), Tsang
"Magnetics of Small Magnetoresistive Sensors" by Tsang, J. Appl. Phys. 55(6), Mar. 15, 1984, pp. 2226-2231.
"Exchange Induced Unidirectional Anisotropy at FeMn-Ni.sub.80 Fe.sub.20 Interfaces", by Tsang et al., J. Appl. Phys. 52(3), Mar. 1981, pp. 2471-2473.
"Unidirectional Anisotropy in Nickel-Iron Films by Exchange Coupling . . . ", by Hempstead et al., IEEE Transaction on Magnetics, vol. Mag.-14, No. 5, Sep. '78, pp. 521-523.

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