Magnetoresistive sensor with improved antiferromagnetic film

Details Magnetoresistive sensor with improved antiferromagnetic film Magnetoresistive sensor with improved antiferromagnetic film

1989-10-31

1991-05-07

Severin, David J.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539, G11B 530

Patent

active

050141473

ABSTRACT:
An improved thin film magnetoresistive (MR) sensor uses an alloy comprising Fe.sub.(1-x) Mn.sub.x, where x is within the range of 0.3 to 0.4, as an antiferromagnetic layer to provide longitudinal exchange bias in the ferromagnetic MR layer. In a specific embodiment the exchange bias is at a high level and is independent of thickness of the antiferromagnetic layer over a wide range.

REFERENCES:
patent: 3582912 (1971-06-01), LeRoi et al.
patent: 4103315 (1978-07-01), Hempstead et al.
patent: 4663685 (1987-05-01), Tsang
patent: 4755897 (1988-07-01), Howard
patent: 4782413 (1988-11-01), Howard et al.

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