Magnetoresistive sensor with flux keepered spin valve configurat

Details Magnetoresistive sensor with flux keepered spin valve configurat Magnetoresistive sensor with flux keepered spin valve configurat

1994-12-05

1996-04-16

Heinz, A. J.

Dynamic magnetic information storage or retrieval

Head

Hall effect

324252, 338 32R, G11B 5127

Patent

active

055088678

ABSTRACT:
A magnetoresistive (MR) sensing system comprises an MR sensor with a layered spin valve structure including thin first and second layers of ferromagnetic material separated by a thin layer of nonmagnetic metallic material. The magnetization direction of the first layer at a zero applied magnetic field is substantially parallel to the longitudinal dimension of the MR sensor and substantially perpendicular to the fixed or "pinned" magnetization direction of the second layer. A thin keeper layer of ferromagnetic material is separated by a thin spacer layer from the layered spin valve structure. This keeper layer has a fixed magnetization direction substantially opposite that of the second layer and a moment-thickness product substantially equal to that of the second layer for cancelling the magnetostatic field from the second layer. A current flow is produced through the MR sensor to produce a magnetic field of a sign and magnitude which cancels the ferromagnetic exchange coupling between the first and second layers. Variations in resistivity of the MR sensor due to difference in rotation of the magnetizations in the first and second layers are sensed as a function of the magnetic field being sensed.

REFERENCES:
patent: 3908194 (1975-09-01), Romankiw
patent: 4755897 (1988-07-01), Howard
patent: 5005096 (1991-04-01), Krounbi et al.
patent: 5079663 (1992-01-01), Ju et al.
patent: 5159513 (1992-10-01), Dieny et al.
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5258884 (1993-11-01), Howard et al.
patent: 5287238 (1994-02-01), Baumgart et al.

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