Magnetoresistive sensor with a thin antiferromagnetic layer...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

06958892

ABSTRACT:
A spin valve sensor with a thin antiferromagnetic (AFM) layer exchange coupled to a self-pinned antiparallel coupled bias layer in the lead overlap regions is provided. The spin valve sensor comprises a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive regions where first and second lead layers overlap the spin valve sensor layers and a thin AFM layer exchange coupled to the bias layer to provide a pinning field to the bias layer.

REFERENCES:
patent: 6266218 (2001-07-01), Carey et al.
patent: 6396669 (2002-05-01), Gill
patent: 6404606 (2002-06-01), Pinarbasi
patent: 2002/0131218 (2002-09-01), Beach
patent: 2003/0156361 (2003-08-01), Li et al.
patent: 2003/0167625 (2003-09-01), Li et al.
patent: 2003/0179517 (2003-09-01), Horng et al.
patent: 2004/0042131 (2004-03-01), Dobisz et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetoresistive sensor with a thin antiferromagnetic layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive sensor with a thin antiferromagnetic layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive sensor with a thin antiferromagnetic layer... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3483697

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.