Magnetoresistive sensor utilizing a sensor material with a perov

Details Magnetoresistive sensor utilizing a sensor material with a perov Magnetoresistive sensor utilizing a sensor material with a perov

1994-09-26

1996-10-08

Williams, Hezron E.

Measuring and testing

Gas analysis

Detector detail

73 2331, 73721, 73727, 73862627, 428697, 428701, 428702, 428212, 338 32R, 360113, 324252, G01N 700, G01N 900

Patent

active

055633315

ABSTRACT:
A magnetoresistive sensor may be constructed with material having a perovskite-like crystal structure and an increased magnetoresistive effect. The material is based on the composition (A1).sub.1-x (A2).sub.x MnO.sub.z, with A1 (trivalent) selected from Y, La, or a lanthanide, A2 (bivalent) from an alkaline-earth metal or Pb, and with 0.1.ltoreq.x.ltoreq.0.9 and 2.0.ltoreq.z.ltoreq.3.5. The sensor contains a layer system with at least two layers with different materials, but in each case in the context of the aforesaid composition, which is selected so that the temperature correlation of the electrical resistance is relatively small. The two layers of the layer system can also be united into a single layer structure with a concentration gradient.

REFERENCES:
patent: 3951603 (1976-04-01), Obayashi et al.
patent: 4507643 (1985-03-01), Sunano et al.
patent: 4601883 (1986-07-01), Sekido et al.
patent: 4793872 (1988-12-01), Meunier et al.
patent: 4827218 (1989-05-01), Meunier et al.
patent: 5068050 (1991-11-01), Inomata et al.
patent: 5225286 (1993-07-01), Fujikawa et al.
patent: 5297438 (1994-03-01), Alles et al.
patent: 5302461 (1994-04-01), Anthony
patent: 5314547 (1994-05-01), Heremans et al.
patent: 5341118 (1994-08-01), Parkin et al.
patent: 5397541 (1995-03-01), Post
patent: 5411814 (1995-05-01), Jin et al.
patent: 5422571 (1995-06-01), Gurney et al.
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5436778 (1995-07-01), Lin et al.
patent: 5452163 (1995-09-01), Coffey et al.
Physica B, vol. 155, 1989, pp. 362-365, North Holland, Amsterdam, R. M. Kusters et al.: Magnetoresistance Measurements on the Magnetic Semiconductor Nd.sub.0.5 Pb.sub.0.5 MnO.sub.3.
Appl. Phys. Lett., vol. 53, No. 16, 17 Oct. 1988, pp. 1557-1559; B. Roas et al.: Epitaxial growth of YBa.sub.2 Cu.sub.3 O.sub.7-X thin films by a laser evaporation process.
Appl. Phys. Lett., vol. 58, No. 23, 10 Jun. 1991, pp. 2710-2712; S. S. P. Parkin et al.: Giant magnetoresistance in antiferromagnetic Co/Cu multilayers.
Appl. Phys. Lett., vol. 61, No. 26, 28 Dec. 1992, pp. 3177-3180; B. Holzapfel et al.: Off-axis laser deposition of YBa.sub.2 Cu.sub.3 O.sub.7-.delta. thin films.
Sensors, vol. 5, 1989, pp. 341-380.
Phys. Rev. Lett., vol. 64, No. 19, 7 May 1990, pp. 2304-2307; S. S. P. Parkin et al.: Oscillations in Exchange Coupling and Magnetoresistance in Metallic Superlattice Structures: Co/Ru, Co/Cr, and Fe/Cr.
Phys. Rev. Lett., vol. 61, No. 21, 21 Nov. 1988, pp. 2472-2475; P. Eitenne et al.: Giant Magnetoresistance of (001) Fe/(001) Cr Magnetic Superlattices.
Phys. Rev. Lett., vol. 68, No. 25, 22 Jun. 1992, pp. 3745-3752; A. E. Berkowitz: Giant Magnetoresistance in Heterogeneous Cu--Co Alloys.
J. Appl. Phys., vol. 38, No. 3, 1 Mar. 1967, pp. 959-964; S. von Molnar et al.: Giant Negative Magnetoresistance in Ferromagnetic Eu.sub.1-x Gd.sub.x Se.
Solid State Commun., vol. 82, No. 9, pp. 693-696, 1992; R. von Helmolt et al.: Metal-Semiconductor-Transition and Spin-Glass Properties of . . . .

Affiliated with

Also associated with

Rating

Magnetoresistive sensor utilizing a sensor material with a perov does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive sensor utilizing a sensor material with a perov, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive sensor utilizing a sensor material with a perov will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-58841