Dynamic magnetic information storage or retrieval – Head – Hall effect
Patent
1991-08-26
1994-08-23
Church, Craig E.
Dynamic magnetic information storage or retrieval
Head
Hall effect
G11B 5127
Patent
active
053412613
ABSTRACT:
A magnetoresistive (MR) sensor comprising a layered structure having at least one trilayer comprising a first and a second thin film ferromagnetic layers separated by and in interfacial contact with a third thin film non-metallic layer. A fourth thin film layer of material is within the first ferromagnetic layer, and the fourth layer has a thickness between a fraction of a monolayer and several monolayer and is located at predetermined distance from the interface between the first and third layers. A current flow is produced through the MR sensor and variations in resistivity of the MR sensor produced by rotation of the magnetization in one or both of the ferromagnetic layers is sensed as a function of the magnetic field being sensed.
REFERENCES:
patent: 4949039 (1990-08-01), Grunberg
"Enhanced Magnetoresistance in Layered Magnetic Structures with Antiferromagnetic Interlayer Exchange", G. Binasch, et al., American Physical Society, pp. 4828-4830, Mar., 1989.
Ferromagnetic Materials Book, Chapter 9 "Transport Properties of Ferromagnetics", I. Campbell, et al., vol. 3, pp. 747-769.
Dieny Bernard
Gurney Bruce A.
Parkin Stuart S. P.
Sanders Ian L.
Speriosu Virgil S.
Church Craig E.
International Business Machines - Corporation
Murray Leslie G.
LandOfFree
Magnetoresistive sensor having multilayer thin film structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetoresistive sensor having multilayer thin film structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive sensor having multilayer thin film structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-507025