Dynamic magnetic information storage or retrieval – Head – Hall effect
Patent
1997-03-14
1999-08-31
Heinz, A. J.
Dynamic magnetic information storage or retrieval
Head
Hall effect
G11B 539
Patent
active
059461675
ABSTRACT:
The present invention provides a magnetoresistive sensor comprising a magnetoresistive film (MR film) having a magnetic field response portion; a pair of leads on the MR film to supply sensing current to the MR film; and upper and lower (first and second) magnetic shield layers arranged so as to sandwich the MR film through a magnetic gap film, respectively. The pair of lead layers is deposited on the side of the magnetic field response portion, i.e., a portion of the MR film between the pair of the leads is the magnetic field response portion. The lead layer respectively provides multi-stage tapered portions, comprising a first tapered portion having a steep angle with respect to the MR film surface, and a second tapered portion having a shallow angle with respect to the MR film surface and provided continuously with the first tapered portion.
REFERENCES:
patent: 4782414 (1988-11-01), Krounbi
patent: 5463517 (1995-10-01), Toda et al.
patent: 5493465 (1996-02-01), Kamiguchi et al.
patent: 5707538 (1998-01-01), Shen
U.S. Patent Application Serial No. 08/577,075, filed Dec. 22, 1995 (pending).
Hara Michiko
Ohsawa Yuichi
Yoda Hiroaki
Heinz A. J.
Kabushiki Kaisha Toshiba
LandOfFree
Magnetoresistive sensor having lead and/or bias layer structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetoresistive sensor having lead and/or bias layer structure , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive sensor having lead and/or bias layer structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2427813