Magnetoresistive sensor having antiferromagnetic exchange bias

Details Magnetoresistive sensor having antiferromagnetic exchange bias Magnetoresistive sensor having antiferromagnetic exchange bias

1994-03-15

1995-07-25

Wolff, John H.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 530

Patent

active

054367786

ABSTRACT:
A magnetic disk storage system wherein a magnetic includes a magnetoresistive sensor is described. The MR sensor comprises a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer has a face-centered-cubic crystalline structure and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer crystalline structure is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.

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Tsang, "Magnetics of small magnetoresistive sensors (invited)", J. Appl. Phys., vol. 55, No. 6, Mar. 15, 1984, pp. 2226-2231.

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