Magnetoresistive sensor having a pinned soft magnetic layer

Details Magnetoresistive sensor having a pinned soft magnetic layer Magnetoresistive sensor having a pinned soft magnetic layer

1997-03-17

1999-07-13

Klimowicz, William J.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

059235055

ABSTRACT:
A magnetoresistive (MR) read sensor fabricated on a substrate comprises an MR layer of magnetoresistive material, a soft adjacent layer (SAL) of soft magnetic material, and a manganese-based metallic antiferromagnetic (AFM) layer between the MR layer and the SAL layer. The AFM layer is in direct contact with the SAL layer and is separated from the MR layer by a non-magnetic spacer layer. A non-magnetic texturing layer is disposed between the SAL layer and the substrate. This structure exhibits a much larger pinning field than read sensors using oxide-based antiferromagnets.

REFERENCES:
patent: 5452163 (1995-09-01), Coffey et al.
patent: 5492720 (1996-02-01), Gill et al.
patent: 5705973 (1998-01-01), Yuan et al.
patent: 5715120 (1998-02-01), Gill

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