Magnetoresistive sensor having a closed domain structure and ele

Details Magnetoresistive sensor having a closed domain structure and ele Magnetoresistive sensor having a closed domain structure and ele

1982-06-22

1985-03-05

Strecker, Gerard R.

Electricity: measuring and testing

Magnetic

Magnetometers

324210, 338 32R, 360113, G01R 3306, G11B 512, H01L 4308

Patent

active

045033943

ABSTRACT:
A magnetoelectric conversion element comprises a magnetoresistive effect material having a closed domain structure, a pair of contacts for supply of current flowing through the magnetoresistive effect material, and a bias electrode disposed between the contacts for biasing the direction of the current flow. The bias electrode is disposed so that the respective angles of intersection between the directions of current flow through different magnetic domains of the magnetoresistive effect material biased by the bias electrode and the directions of spontaneous magnetization biased by an external magnetic field are both increased or decreased.

REFERENCES:
patent: 4024489 (1977-05-01), Bajorek et al.
patent: 4052748 (1977-10-01), Kuijk
patent: 4142218 (1979-02-01), Gorter
patent: 4321640 (1982-03-01), Van Gestel
patent: 4425593 (1984-01-01), Postma
Bajorek et al., "Magnetoresistive Current Sensor" IBM Tech. Discl. Bull., vol. 18, No. 8, Jan. 1976, pp. 2745-2748.

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