Magnetoresistive sensor element

Details Magnetoresistive sensor element Magnetoresistive sensor element

1987-09-29

1989-01-24

Tupper, Robert S.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

048004570

ABSTRACT:
A magnetoresistive sensor which includes an element having a first layer that exhibits a magnetoresistive response, a second layer that magnetically biases the first layer and is in contact therewith, and possibly a substrate that contacts the first layer, with the first layer disposed between the second layer and the substrate. Of course, the first and second layers are interchangeable. Adjoining a side of the second layer is an anode contact and a cathode contact. The anode contact and the cathode contact are positioned on the side of the second layer such that they do not contact each other.

REFERENCES:
patent: 4488194 (1984-12-01), Michel
patent: 4639806 (1987-01-01), Kira et al.
patent: 4686472 (1987-08-01), Van Ooijen et al.

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