Magnetoresistive sensor based on the spin valve effect

Details Magnetoresistive sensor based on the spin valve effect Magnetoresistive sensor based on the spin valve effect

1991-02-08

1992-10-27

Heinz, A. J.

Dynamic magnetic information storage or retrieval

Head

Hall effect

324252, G11B 5127

Patent

active

051595133

ABSTRACT:
A magnetoresistive (MR) sensor comprising a layered structure formed on a substrate includes a first and a second thin film layer of magnetic material separated by a thin film layer of non-magnetic metallic material such as Cu, Au, or Ag, with at least one of the layers of ferromagnetic material formed of either cobalt or a cobalt alloy. The magnetization direction of the first ferromagnetic layer, at zero applied field, is set substantially perpendicular to the magnetization direction of the second ferromagnetic layer which is fixed in position. A current flow is produced through the sensor, and the variations in voltage across the MR sensor are sensed due to the changes in resistance produced by rotation of the magnetization in the front layer of ferromagnetic material as a function of the magnetic field being sensed.

REFERENCES:
patent: 4103315 (1978-07-01), Hempstead
patent: 4949039 (1990-08-01), Grunberg
"Thin Film Magnetoresistors in Memory, Storage, and Related Applications", D. Thompson, et al., IEEE Transactions on Magnetics, vol. Mag-11, Jul. 1975.

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