Magnetoresistive sensor

Details Magnetoresistive sensor Magnetoresistive sensor

1990-06-21

1992-07-28

Wolff, John H.

Dynamic magnetic information storage or retrieval

Head

Hall effect

338 32R, G11B 5127, G11B 533

Patent

active

051345331

ABSTRACT:
The present invention concerns a magnetroesistive sensor. In this sensor, the sensitive element is constituted by a monocrystalline magnetic metallic multilayer formed of a stack of layers of a magnetic material separated by layers of a non-magnetic material, the multilayer being constructed in such a way that the layers of magnetic material have antiferromagnetic type coupling and that of the transition between the antiparallel aligned state and the parallel aligned state occurs in a very short interval of the magnetic field.

REFERENCES:
patent: 4103315 (1988-07-01), Hempstead
patent: 4616281 (1986-10-01), Nakamura
patent: 4879619 (1989-11-01), Fontana, Jr. et al.
patent: 4896235 (1990-01-01), Takino et al.

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