Magnetoresistive sensor

Dynamic magnetic information storage or retrieval – Head – Hall effect

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

338 32R, G11B 5127, G11B 533

Patent

active

051345331

ABSTRACT:
The present invention concerns a magnetroesistive sensor. In this sensor, the sensitive element is constituted by a monocrystalline magnetic metallic multilayer formed of a stack of layers of a magnetic material separated by layers of a non-magnetic material, the multilayer being constructed in such a way that the layers of magnetic material have antiferromagnetic type coupling and that of the transition between the antiparallel aligned state and the parallel aligned state occurs in a very short interval of the magnetic field.

REFERENCES:
patent: 4103315 (1988-07-01), Hempstead
patent: 4616281 (1986-10-01), Nakamura
patent: 4879619 (1989-11-01), Fontana, Jr. et al.
patent: 4896235 (1990-01-01), Takino et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetoresistive sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1690736

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.