Dynamic magnetic information storage or retrieval – Head – Hall effect
Patent
1996-11-06
1999-06-08
Tupper, Robert S.
Dynamic magnetic information storage or retrieval
Head
Hall effect
G11B 539
Patent
active
059108681
ABSTRACT:
A magnetoresistive (MR) sensor for MR heads comprising a magnetoresistive ferromagnetic layer (MR layer) and an antiferromagnetic layer in direct contact with the surface of the MR layer. The MR layer has a face-centered-cubic (fcc) structure. The crystalline structure of the antiferromagnetic layer is the fcc structure in the vicinity of the interface of the MR layer and the antiferromagnetic layer, and continuously changes to a face-centered-tetragonal (fct) structure toward the surface opposite to the interface. The interface of the MR layer and the antiferromagnetic layer is continuous with respect to the crystalline structure due to the epitaxial growth of the antiferromagnetic layer on the surface of the MR layer.
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patent: 5436778 (1995-07-01), Lin et al.
IEEE Trans. Mag., Unidirectional Anistropy in Nickel-Iron Films by Exchange Coupling with Antiferromagnetic Films, R.D. Hempstead, S. Krongelb, D.A. Thompson, 1978, 521-523.
Appl. Phys. Lett, 65 (9), Improved Exchange Coupling Between Ferromagnetic Ni-Fe and Antiferromagnetic Ni-Mn-Based Films, T. Lin, D. Mauri, N. Staud, C. Hwang, J. Howard, G. Gorman, Aug. 29, 1994, 1183-1185.
J. Phys. Chem. Solids Pergamon Press, The Antiferromagnetic Structure of NiMn, J.S. Kasper, J.S. Kouvel, May 7, 1959, 231-238.
Kobayashi Toshio
Kurosawa Hisao
Mitsumata Chiharu
Noguchi Shin
Hitachi Metals Ltd.
Tupper Robert S.
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