Magnetoresistive read transducer with partially abutted junction

Details Magnetoresistive read transducer with partially abutted junction Magnetoresistive read transducer with partially abutted junction

1996-09-03

1997-07-08

Levy, Stuart S.

Dynamic magnetic information storage or retrieval

Head

Hall effect

324252, G11B 5127, G11B 533

Patent

active

056468059

ABSTRACT:
A magnetoresistive transducer is formed with a trilayer structure including a soft adjacent magnetic layer (SAL), a spacer layer and a magnetoresistive (MR) sensor element. The SAL and part of the spacer layer extend continuously across the transducer structure. The MR sensor element has end portions that partially abut hard permanent magnetic (PM) films and partially abut conductive leads formed over the PM films. The transducer structure minimizes the problem of electrical shorting and achieves significant improvements in magnetic performance of the active MR region and signal readout.

REFERENCES:
patent: 4663685 (1987-05-01), Tsang
patent: 5018037 (1991-05-01), Krounbi et al.
patent: 5438470 (1995-08-01), Ravipati et al.

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