Magnetoresistive random access memory simulation

Details Magnetoresistive random access memory simulation Magnetoresistive random access memory simulation

2007-09-04

2007-09-04

Rodriguez, Paul (Department: 2123)

Data processing: structural design, modeling, simulation, and em

Simulating electronic device or electrical system

Reexamination Certificate

active

10806612

ABSTRACT:
A computer model simulation for an MRAM cell. In one example, the MRAM cell includes a magnetic tunnel junctions (MTJ) with multiple free magnetic layers. In one embodiment, the simulation implements a state machine whose states variables transition based on indications of magnetic fields passing thresholds. In one embodiment, the conductance values utilized from the model are derived from measured data that is curve fitted to obtain first and second order polynomial coefficient parameters to be used in the model.

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U.S. Appl. No. 10/302,203, filed Nov. 22, 2002, entitled “Method and Apparatus for Simulating a Magnetoresistive Random Access Memory (MRAM)”, assignee same as assignee hereof.

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