Magnetoresistive random access memory devices and methods...

Details Magnetoresistive random access memory devices and methods... Magnetoresistive random access memory devices and methods...

2007-01-30

2007-01-30

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21665

Reexamination Certificate

active

10912979

ABSTRACT:
Fabricating a magnetoresistive random access memory cell and a structure for a magnetoresistive random access memory cell begins by providing a substrate having a transistor formed therein. A contact element is formed electrically coupled to the transistor and a dielectric material is deposited within an area partially bounded by the contact element. A digit line is formed within the dielectric material, the digit line overlying a portion of the contact element. A conductive layer is formed overlying the digit line and in electrical communication with the contact element.

REFERENCES:
patent: 6365419 (2002-04-01), Durlam et al.
patent: 6430084 (2002-08-01), Rizzo et al.
patent: 6501144 (2002-12-01), Rizzo
patent: 6555858 (2003-04-01), Jones et al.
patent: 6943038 (2005-09-01), Meixner et al.
patent: 2004/0087163 (2004-05-01), Steimle et al.
patent: 2004/0175848 (2004-09-01), Chen et al.

Affiliated with

Also associated with

Rating

Magnetoresistive random access memory devices and methods... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive random access memory devices and methods..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive random access memory devices and methods... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3736545