Magnetoresistive random access memory device with...

Details Magnetoresistive random access memory device with... Magnetoresistive random access memory device with...

2006-08-29

2010-02-16

Gurley, Lynne A. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE21665, C365S158000

Reexamination Certificate

active

07663198

ABSTRACT:
An arrangement of magnetic liners for the bit lines or word lines of an MRAM device that reduces or eliminates stray magnetic fields at the ends of the magnetic liners, thereby reducing the occurrence of offset fields over portions of the MRAM device due to the magnetic liners is described. The orientation of magnetization of adjacent magnetic liners is alternated, causing the end poles of the magnetic liners to cancel each other. The shapes of the ends of the magnetic liners are alternated to vary their switching fields. Methods are described that use this ability to vary the switching fields to alternate the orientation of magnetization of the magnetic liners.

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Varga, Edlt, “Domain wall motion in permalloy wires,” University of Notre Dame, IN, USA, 12 pages.
Kirk, K.J., et al., “Switching fields and magnetostatic interations of thin film magnetic nanoelements,” Applied Physics Letters, vol. 71, No. 4, Jul. 28, 1997, pp. 539-541.

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