Magnetoresistive random access cross-tie memory architecture and

Details Magnetoresistive random access cross-tie memory architecture and Magnetoresistive random access cross-tie memory architecture and

1985-11-05

1988-01-26

Moffitt, James W.

Static information storage and retrieval

Magnetic shift registers

Thin film

365158, G11C 1908

Patent

active

047220732

ABSTRACT:
A magnetoresistive random access memory array and signal processing system which provides an improved signal to noise ratio. The basic memory complex associated with the storage of a single binary digit is a quad of memory elements or cells which are addressed in complementary fashion. The enhanced read-out signal discrimination is had by utilizing a double-correlated double-sampling differential signal processing system in which complementary data is serially passed through the same path with repeated high-speed differencing which greatly reduces nonuniformity fixed patterns as well as correlated low frequency temporal noise.

REFERENCES:
patent: Re30087 (1979-08-01), White et al.
patent: 3997885 (1976-12-01), Battarel
patent: 4035629 (1977-07-01), Lampe et al.
patent: 4473893 (1984-09-01), Zierhut et al.
Publication by L. J. Schwee, entitled "Proposal in Cross-Tie Wall and Block Line Propagation in Thin Magnetic Films", IEEE Transactions on Magnetics, IMAG 8, No. 3, pp. 405-407, Sep., 1972.

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