Magnetoresistive memory or sensor devices having improved...

Details Magnetoresistive memory or sensor devices having improved... Magnetoresistive memory or sensor devices having improved...

2005-08-09

2005-08-09

Thompson, Craig A. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

Reexamination Certificate

active

06927466

ABSTRACT:
The invention provides an magnetic memory element having improved switching properties and zero field offset, and a manufacturing method thereof. The element comprises a first magnetic layer overlying a conductive layer and a nonmagnetic layer overlying the first magnetic layer. Next, a second magnetic layer is provided over the nonmagnetic layer, wherein the second magnetic layer comprises an antiferromagnetic layer overlying a ferromagnetic free layer to apply a small bias to the ferromagnetic free layer. Then, the first magnetic, nonmagnetic and second magnetic layers are patterned to form the memory element.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6163477 (2000-12-01), Tran
patent: 6282069 (2001-08-01), Nakazawa et al.
patent: 6341053 (2002-01-01), Nakada et al.
patent: 6351410 (2002-02-01), Nakao et al.
patent: 6418048 (2002-07-01), Sin et al.
patent: 6456525 (2002-09-01), Perner et al.
patent: 6542341 (2003-04-01), Carey et al.
patent: 6655006 (2003-12-01), Pinarbasi
patent: 6700760 (2004-03-01), Mao
patent: 2002/0154455 (2002-10-01), Lenssen
“Magnetic Tunnel Junction Materials for Electronic Applications” Slaughter et al. JOM-e, 52. Jun. 2000. http://www.tms.org/pubs/journals/JOM/0006/Slaughter/Slaughter-006.html (visited Oct. 3, 2002).

Affiliated with

Also associated with

Rating

Magnetoresistive memory or sensor devices having improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive memory or sensor devices having improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive memory or sensor devices having improved... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3503478