Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-10-09
2007-10-09
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C438S073000
Reexamination Certificate
active
11295177
ABSTRACT:
The invention includes a construction comprising an MRAM device between a pair of conductive lines. Each of the conductive lines can generate a magnetic field encompassing at least a portion of the MRAM device. Each of the conductive lines is surrounded on three sides by magnetic material to concentrate the magnetic fields generated by the conductive lines at the MRAM device. The invention also includes a method of forming an assembly containing MRAM devices. A plurality of MRAM devices are formed over a substrate. An electrically conductive material is formed over the MRAM devices, and patterned into a plurality of lines. The lines are in a one-to-one correspondence with the MRAM devices and are spaced from one another. After the conductive material is patterned into lines, a magnetic material is formed to extend over the lines and within spaces between the lines.
REFERENCES:
patent: 5587943 (1996-12-01), Torok et al.
patent: 5956267 (1999-09-01), Hurst et al.
patent: 6048739 (2000-04-01), Hurst et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6351409 (2002-02-01), Rizzo et al.
patent: 6356477 (2002-03-01), Tran
patent: 6358757 (2002-03-01), Anthony
patent: 6404674 (2002-06-01), Anthony et al.
patent: 6413788 (2002-07-01), Tuttle
patent: 6430084 (2002-08-01), Rizzo et al.
patent: 6430085 (2002-08-01), Rizzo
patent: 6473328 (2002-10-01), Mercaldi
patent: 6475812 (2002-11-01), Nickel et al.
patent: 6483740 (2002-11-01), Spitzer et al.
patent: 6501144 (2002-12-01), Rizzo
patent: 6504198 (2003-01-01), Morimoto
patent: 6504221 (2003-01-01), Tran et al.
patent: 6525957 (2003-02-01), Goronkin et al.
patent: 6538917 (2003-03-01), Tran et al.
patent: 6538920 (2003-03-01), Sharma et al.
patent: 6538921 (2003-03-01), Daughton et al.
patent: 6656371 (2003-12-01), Drewes
patent: 7038286 (2006-05-01), Nejad et al.
patent: 2002/0132375 (2002-09-01), Doan et al.
patent: 2002/0160541 (2002-10-01), Durcan et al.
Deak James G.
Nejad Hasan
Micro)n Technology, Inc.
Vu David
Wells St. John P.S.
LandOfFree
Magnetoresistive memory device assemblies, and methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetoresistive memory device assemblies, and methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive memory device assemblies, and methods of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3826055