Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-02-14
2006-02-14
Prenty, Mark V. (Department: 2822)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S421000
Reexamination Certificate
active
06998276
ABSTRACT:
Embodiments of the invention include magnetoresistive memory cells having magnetic focusing spacers are formed on sidewalls thereof. Therefore, magnetic fields generated by a bit line and a digit line are focused by the magnetic focusing spacers and efficiently transferred to the magnetoresistive memory cell. In addition, an interlayer dielectric layer surrounding the magnetoresistive memory cell may be formed of high permeability material, thereby efficiently transferring magnetic field.
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Marger & Johnson & McCollom, P.C.
Prenty Mark V.
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