Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2005-01-11
2005-01-11
Klimowicz, William (Department: 2652)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C365S158000, C365S171000, C365S173000
Reexamination Certificate
active
06842317
ABSTRACT:
A magnetoresistive element includes a multilayer film configuration including: a tunnel insulation layer; and a pair of magnetic layers that are laminated with the tunnel insulation layer interposed therebetween. A resistance value of the magnetoresistive element varies with a relative angle between magnetic orientations of both of the magnetic layers, and at least one of the magnetic layers includes a magnetic film having a thermal expansion coefficient not greater than a value obtained by adding 2×10−6/K to a thermal expansion coefficient of the tunnel insulation layer. The thus configured magnetoresistive element can exert excellent thermal stability. The use of such a magnetoresistive element can realize a magnetic head, a magnetic memory element and a magnetic recording apparatus with excellent thermal stability.
REFERENCES:
patent: 6703249 (2004-03-01), Okazawa et al.
patent: 6751055 (2004-06-01), Alfoqaha et al.
patent: 20010033464 (2001-10-01), Shimazawa et al.
patent: 20020186011 (2002-12-01), Murata et al.
patent: 20030235014 (2003-12-01), Yamanaka et al.
patent: 20040008451 (2004-01-01), Zou et al.
patent: 8-236349 (1996-09-01), None
Matsukawa N. et al., “Thermally stable exchange-biased . . . ”, inApplied Physics Letters, Dec. 16, 2002, vol. 81, No. 25, pp 4784-4786.
Sugita Y et al., “Thermal stability of PtMn based . . . ”, inJournal of Applied Physics, Jun. 1, 2001, vol. 89, No. 11, pp. 6919-6921.
Miyazaki T., “Spin Tunnel Junction”, inMaterials Integration, 2000, vol. 13, No. 12 pp 7-12.
Miyazaki T et al., “Giant magnetic tunneling effect . . . ”, inJournal of Magnetism and Magnetic Materials, 1995, 139, L231-L234.
Julliere M., “Tunneling Between Ferromagnetic Films”, inPhysics Letters, Sep. 8, 1975, vol. 54A, No. 3, pp 225-226.
Miyazaki T. et al., “Spin Polarized Tunneling in . . . ”in Journal of Magnetism and Magnetic Materials, 1995, 151, pp 403-410.
Matsukawa Nozomu
Odagawa Akihiro
Sugita Yasunari
Klimowicz William
Matsushita Electric - Industrial Co., Ltd.
Merchant & Gould P.C.
LandOfFree
Magnetoresistive element, magnetic head, magnetic memory and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetoresistive element, magnetic head, magnetic memory and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive element, magnetic head, magnetic memory and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3383378