Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-08-28
2010-06-01
Pham, Hoai v (Department: 2892)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S048000, C257SE21665
Reexamination Certificate
active
07727778
ABSTRACT:
A magnetoresistive element includes a stack formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed, a first nonmagnetic layer, a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, a first circumferential wall provided on the second nonmagnetic layer in contact with a circumferential surface of the second fixed layer to surround the second fixed layer, and made of an insulator, and a second circumferential wall provided on the first nonmagnetic layer in contact with a circumferential surface of the free layer to surround the free layer, and made of an insulator.
REFERENCES:
patent: 7629182 (2009-12-01), Wise
patent: 2004-214600 (2004-07-01), None
patent: 2005-79258 (2005-03-01), None
U.S. Appl. No. 12/048,819, filed Mar. 14, 2008, Masayoshi Iwayama.
U.S. Appl. No. 12/107,955, filed Apr. 23, 2008, Masayoshi Iwayama.
U.S. Appl. No. 12/108,093, filed Apr. 23, 2008, Masayoshi Iwayama et al.
Asao Yoshiaki
Hosotani Keiji
Iwayama Masayoshi
Kajiyama Takeshi
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Pham Hoai v
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