Magnetoresistive element and method of manufacturing the same

Details Magnetoresistive element and method of manufacturing the same Magnetoresistive element and method of manufacturing the same

2005-07-26

2008-10-07

Chen, Tianjie (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07433160

ABSTRACT:
A magnetoresistive element is disclosed that includes a magnetoresistive film; a cap film configured to cover the magnetoresistive film and include a three-layer structure in at least a part thereof, the three-layer structure being formed of a third protection layer, a second protection layer, and a first protection layer in order from the magnetoresistive film side; and upper and lower terminals for applying a sense current perpendicularly to the surface of the magnetoresistive film. The magnetoresistive film includes a first magnetic layer whose direction of magnetization is changed by an external magnetic field, a second magnetic layer whose direction of magnetization is fixed with respect to the external magnetic field, and a nonmagnetic layer magnetically separating the first magnetic layer and the second magnetic layer.

REFERENCES:
patent: 7038890 (2006-05-01), Pinarbasi
patent: 7057863 (2006-06-01), Cyrille et al.
patent: 2004/0027731 (2004-02-01), Hasegawa et al.
patent: 2004/0201920 (2004-10-01), Koide et al.
patent: 2004/0246630 (2004-12-01), Otomo
patent: 2004/0264069 (2004-12-01), Freitag et al.
patent: 2005/0157434 (2005-07-01), Ito
patent: 2005/0174702 (2005-08-01), Gill
patent: 2005/0180061 (2005-08-01), Ding et al.
patent: 2003-198005 (2003-07-01), None
Atsushi Tanaka et al.; “Spin-Valve Heads in the Current-Perpendicular-to-Plane Mode for Ultrahigh-Density Recording”, IEEE Transactions on Magnetics, vol. 38, No. 1, Jan. 2002, pp. 84-88.
Brian N. Chapman; “Glow Discharge Processes: sputtering and plasma etching”, 1980, p. 354.

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