Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-09-13
2005-09-13
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S238000
Reexamination Certificate
active
06943041
ABSTRACT:
The present invention provides a method for producing a magnetoresistive element including a tunnel insulating layer, and a first magnetic layer and a second magnetic layer that are laminated so as to sandwich the tunnel insulating layer, wherein a resistance value varies depending on a relative angle between magnetization directions of the first magnetic layer and the second magnetic layer. The method includes the steps of: (i) laminating a first magnetic layer, a third magnetic layer and an Al layer successively on a substrate; (ii) forming a tunnel insulating layer containing at least one compound selected from the group consisting of an oxide, nitride and oxynitride of Al by performing at least one reaction selected from the group consisting of oxidation, nitriding and oxynitriding of the Al layer; and (iii) forming a laminate including the first magnetic layer, the tunnel insulating layer and a second magnetic layer by laminating the second magnetic layer in such a manner that the tunnel insulating layer is sandwiched by the first magnetic layer and the second magnetic layer. The third magnetic layer has at least one crystal structure selected from the group consisting of a face-centered cubic crystal structure and a face-centered tetragonal crystal structure and is (111) oriented parallel to a film plane of the third magnetic layer. According to this production method, it is possible to produce a magnetoresistive element with excellent properties and thermal stability.
REFERENCES:
patent: 5449419 (1995-09-01), Suzuki et al.
patent: 5603766 (1997-02-01), Visokay et al.
patent: 5753131 (1998-05-01), Choukh et al.
patent: 5801984 (1998-09-01), Parkin
patent: 6005753 (1999-12-01), Fontana et al.
patent: 6052263 (2000-04-01), Gill
patent: 6169303 (2001-01-01), Anthony
patent: 6201259 (2001-03-01), Sato et al.
patent: 6210818 (2001-04-01), Saito
patent: 6226197 (2001-05-01), Nishimura
patent: 6312840 (2001-11-01), Kumagai et al.
patent: 6387548 (2002-05-01), Hasegawa et al.
patent: 6418001 (2002-07-01), Nakatani
patent: 6473960 (2002-11-01), Schwartz et al.
patent: 6528326 (2003-03-01), Hiramoto et al.
patent: 6552882 (2003-04-01), Hayashi
patent: 6583969 (2003-06-01), Pinarbasi
patent: 2001/0053053 (2001-12-01), Saito et al.
patent: 2002/0039264 (2002-04-01), Ohsawa et al.
patent: 2002/0047145 (2002-04-01), Nickel
patent: 2002/0126422 (2002-09-01), Westwood
patent: 2003/0197984 (2003-10-01), Inomata et al.
patent: 0 674 327 (1995-09-01), None
patent: 0 717 422 (1996-06-01), None
patent: 0 871 231 (1998-10-01), None
patent: 10-162326 (1998-06-01), None
patent: 11-266043 (1999-09-01), None
patent: 2000-020922 (2000-01-01), None
patent: 2000-067418 (2000-03-01), None
patent: 2000-068569 (2000-03-01), None
patent: 2000-132961 (2000-05-01), None
patent: 2000-187816 (2000-07-01), None
patent: 2001-188435 (2000-07-01), None
patent: 2001-236613 (2001-08-01), None
patent: 2002-171012 (2002-06-01), None
patent: 2002-204004 (2002-07-01), None
patent: 00/74154 (2000-12-01), None
patent: 02/088765 (2002-11-01), None
Johnson. M, “Symposium on Spin Tunneling and Injection Phenomena”, J. Appln. Phys. 79(8), Apr. 15, 1996, pp. 4724-4729.
Ji Hyung Yu et al. “Magnetic Tunnel Junctions with High Magnetoresistance and Small Bias Voltage Dependence Using Expitaxial NiFe (111) Ferromagnetic Bottom Electrodes”, Journal of Applied Physics, vol. 93, No. 10, pp. 8555-8557, May 15, 2003.
Koichiro Inomata, MRAM Technology Progress and Prospect Materials Integration vol. 13, No. 12, P13-18, 2000 (Japanese only).
T.Miyazaki et al., “Giant Magnetic Tunneling Effect in Fe/Al2O3/Fe Junction”, Journal of Magnetism and Magnetic Materials, 139 (1995) L231-L234.
Ping Shang et al., “High-resolution electron microscopy study of tunneling junctions with AIN and AIon barriers”, Journal of Applied Physics, vol. 89, No. 11, pp. 6874-6876, Jun. 1, 2001.
Yasunari Sugita et al., “Tunneling Magnetoresistance Enhancement for Pt-Added Magnetic Tunnel Junctions”, Japanese Journal of Applied Physics, vol. 41, No. 10A, pp. L1072-1074, Oct. 1, 2002.
Nozomu Matsuka et al., “Thermally stable exchange-biased magnetic tunnel junctions over 400° C” Applied Physics Letter, vol. 81, No. 25, pp. 4784-4786, Dec. 16, 2002.
Kawashima Yoshio
Matsukawa Nozomu
Morinaga Yasunori
Odagawa Akihiro
Sugita Yasunari
Matsushita Electric - Industrial Co., Ltd.
Merchant & Gould P.C.
Tsai H. Jey
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