Dynamic magnetic information storage or retrieval – Head
Reexamination Certificate
2005-07-12
2005-07-12
Cao, Allen (Department: 2652)
Dynamic magnetic information storage or retrieval
Head
C360S324100
Reexamination Certificate
active
06917492
ABSTRACT:
A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100-zRzat the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a+b+c=100, a≧30, x+y=100, 0<y≦35, and 0.1≦z≦20. This element can provide a high MR ratio. A method for manufacturing a magnetoresistive element includes a first heat treatment process at 200° C. to 330° C. for not less than one hour and a second heat treatment process at not less than 340° C. performed after the first heat treatment process.
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Hiramoto Masayoshi
Kawashima Yoshio
Matsukawa Nozomu
Odagawa Akihiro
Satomi Mitsuo
Cao Allen
Matsushita Electric - Industrial Co., Ltd.
Merchant & Gould P.C.
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