Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2011-04-05
2011-04-05
Menz, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S295000, C365S148000
Reexamination Certificate
active
07919826
ABSTRACT:
A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.
REFERENCES:
patent: 6656604 (2003-12-01), Hasewaga
patent: 6762916 (2004-07-01), Aoki et al.
patent: 6829161 (2004-12-01), Huai et al.
patent: 7187525 (2007-03-01), Shimura et al.
patent: 7239545 (2007-07-01), Hosotani
patent: 7262449 (2007-08-01), Kajiyama
patent: 7327539 (2008-02-01), Saito
patent: 7372118 (2008-05-01), Asao et al.
patent: 7629182 (2009-12-01), Wise
patent: 7706175 (2010-04-01), Hosotani et al.
patent: 7727778 (2010-06-01), Iwayama et al.
patent: 7741688 (2010-06-01), Kajiyama
patent: 7772660 (2010-08-01), Ueda
patent: 2001/0006446 (2001-07-01), Aoki et al.
patent: 2002/0024775 (2002-02-01), Hasegawa
patent: 2002/0054463 (2002-05-01), Mukoyama et al.
patent: 2006/0054947 (2006-03-01), Asao et al.
patent: 2006/0083053 (2006-04-01), Hosotani
patent: 2007/0224707 (2007-09-01), Hosotani
patent: 2008/0080233 (2008-04-01), Hosotani et al.
patent: 2008/0089118 (2008-04-01), Kajiyama
patent: 2008/0135958 (2008-06-01), Kajiyama et al.
patent: 2008/0170432 (2008-07-01), Asao
patent: 2008/0203503 (2008-08-01), Asao
patent: 2008/0206895 (2008-08-01), Asao et al.
patent: 2008/0265347 (2008-10-01), Iwayama et al.
patent: 2008/0277703 (2008-11-01), Iwayama
patent: 2009/0091863 (2009-04-01), Hosotani et al.
patent: 2009/0206427 (2009-08-01), Oh et al.
patent: 2010/0047930 (2010-02-01), Hosotani et al.
patent: 2010/0053823 (2010-03-01), Iwayama et al.
patent: 2010/0103718 (2010-04-01), Asao et al.
patent: 2010/0232210 (2010-09-01), Kajiyama et al.
patent: 2003-298145 (2003-10-01), None
patent: 2006-156685 (2006-06-01), None
patent: 3854839 (2006-09-01), None
Asao Yoshiaki
Hosotani Keiji
Iwayama Masayoshi
Kajiyama Takeshi
Kabushiki Kaisha Toshiba
Menz Laura M
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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